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US 8,709,154 B2Granted
Methods for manufacturing monocrystalline or near-monocrystalline cast materials
AssigneeAMG IdealCast Solar Corporation
InventorNathan G. Stoddard
Life of this patent
Estimating the term…
Abstract
Methods are provided for casting one or more of a semiconductor, an oxide, and an intermetallic material. With such methods, a cast body of a monocrystalline form of the one or more of a semiconductor, an oxide, and an intermetallic material may be formed that is free of, or substantially free of, radially-distributed impurities and defects and having at least two dimensions that are each at least about 35 cm.
Claims22
A method of casting one or more of a semiconductor, an oxide, and an intermetallic material, comprising:
- placing a molten form of the one or more materials in contact with at least one seed crystal in a vessel having one or more side walls heated to at least the melting temperature of the one or more materials, and at least one wall for cooling;
- and
- forming a solid body comprising a monocrystalline form of the one or more materials, optionally having at least two dimensions each being at least about 10 cm, by cooling the molten form of the one or more materials to control crystallization, wherein the forming includes forming a solid-liquid interface at an edge of the molten form of the one or more materials that optionally at least initially parallels the at least one wall for cooling, the interface being controlled during the cooling so as to move in a direction that increases a distance between the molten form of the one or more materials and the at least one wall for cooling.
A method of casting one or more of a semiconductor, an oxide, and an intermetallic material, comprising:
- placing a geometric arrangement of a plurality of seed crystals comprising a monocrystalline form of the one or more materials on at least one surface in a crucible having one or more side walls heated to at least the melting temperature of the one or more materials, and at least one wall for cooling, wherein the geometric arrangement includes close-packed polygons or hexagons;
- placing a molten form of the one or more materials in contact with the geometric arrangement of the seed crystals;
- and
- forming a solid body comprising a monocrystalline form of the one or more materials, optionally having at least two dimensions each being at least about 10 cm, by cooling the molten form of the one or more materials to control crystallization, wherein the forming includes forming a solid-liquid interface at an edge of the molten form of the one or more materials that parallels the at least one wall for cooling, the interface being controlled during the cooling so as to move in a direction that increases a distance between the molten form of the one or more materials and the at least one wall for cooling.
1 more element
A method of casting one or more of a semiconductor, an oxide, and an intermetallic material, comprising:
- arranging a plurality of seed crystals comprising a monocrystalline form of the one or more materials in a predetermined pattern on at least two surfaces of a crucible;
- placing a molten form of the one or more materials in contact with the monocrystalline seed crystals;
- and
- forming a solid body comprising a monocrystalline form of the one or more materials, optionally having at least two dimensions each being at least about 10 cm, by cooling the molten form of the one or more materials from the at least two surfaces of the crucible to control crystallization, wherein the forming includes controlling a solid-liquid interface at an edge of the molten form of the one or more materials during the cooling so as to move in a direction that increases a distance between the molten form of the one or more materials and the at least two surfaces of the crucible.
1 more element
A method of casting one or more of a semiconductor, an oxide, and an intermetallic material, comprising:
- placing feedstock of the one or more materials in contact with at least one seed crystal comprising a monocrystalline form of the one or more materials on at least one surface;
- heating the feedstock and the at least one seed crystal to the melting temperature of the one or more materials;
- controlling the heating so that the at least one seed crystal does not melt completely, the controlling comprising maintaining a .DELTA.T of about 0.1.degree. C./min or less, as measured on an outside surface of the crucible, after reaching the melting temperature of the one or more materials elsewhere in the crucible;
- and, once the at least one seed crystal is partially melted,
- forming a solid body comprising a monocrystalline form of the one or more materials by cooling the one or more materials.
2 more elements
A method of casting one or more of a semiconductor, an oxide, and an intermetallic material, comprising:
- placing a geometric arrangement of a plurality of seed crystals comprising a monocrystalline form of the one or more materials on at least one surface in a crucible, wherein the geometric arrangement includes close-packed polygons or hexagons;
- placing feedstock of the one or more materials in contact with the plurality of seed crystals on the at least one surface;
- heating the feedstock and the plurality of seed crystals to the melting temperature of the one or more materials;
- controlling the heating so that the plurality of seed crystals does not melt completely, the controlling comprising maintaining a .DELTA.T of about 0.1.degree. C./min or less, as measured on an outside surface of the crucible, after reaching the melting temperature of the one or more materials elsewhere in the crucible;
- and, once the at least one seed crystal is partially melted,
- forming a solid body comprising a monocrystalline form of the one or more materials by cooling the one or more materials.
3 more elements
A method of casting one or more of a semiconductor, an oxide, and an intermetallic material, comprising:
- arranging a plurality of seed crystals comprising a monocrystalline form of the one or more materials in a predetermined pattern on at least two surfaces of a crucible;
- placing feedstock of the one or more materials in contact with the plurality of seed crystals on the at least two surfaces;
- heating the feedstock and the plurality of seed crystals to the melting temperature of the one or more materials;
- controlling the heating so that the plurality of seed crystals does not melt completely, the controlling comprising maintaining a .DELTA.T of about 0.1.degree. C./min or less, as measured on an outside surface of the crucible, after reaching the melting temperature of the one or more materials elsewhere in the crucible;
- and, once at least one monocrystalline seed crystal is partially melted,
- forming a solid body comprising a monocrystalline form of the one or more materials by cooling the one or more materials.
3 more elements
A method of casting one or more of a semiconductor, an oxide, and an intermetallic material, comprising:
- placing a molten form of the one or more materials in contact with at least one seed crystal in a vessel having one or more side walls heated to at least the melting temperature of the one or more materials, the at least one seed crystal arranged to cover an entire or substantially an entire area of a surface of the vessel;
- and
- forming a solid body comprising a monocrystalline form of the one or more materials, optionally having at least two dimensions each being at least about 10 cm, by cooling the molten form of the one or more materials to control crystallization.
Dependencies are inferred from the claim text.