Integrated circuit, method for driving the same, and semiconductor device

A method for driving a circuit including a first flip-flop and a second flip-flop, the second flip-flop including a nonvolatile memory circuit, comprising the steps of:

• storing first data in the first flip-flop in a first period;
• outputting the first data from the first flip-flop and storing the first data in the second flip-flop in a second period after the first period;
• stopping supply of power to the circuit in a third period after the second period;
• restarting supply of power to the circuit and outputting the first data stored in the second flip-flop in a fourth period after the third period;
• and
• storing the first data in the first flip-flop in a fifth period after the fourth period.

A method for driving a circuit including a first flip-flop, a second flip-flop, the second flip-flop including a nonvolatile memory circuit, and a selection circuit comprising the steps of:

• outputting first data from the selection circuit and storing the first data in the first flip-flop in a first period;
• outputting the first data from the first flip-flop and storing the first data in the second flip-flop in a second period after the first period;
• stopping supply of power to the circuit in a third period after the second period;
• restarting supply of power to the circuit and outputting the first data stored in the second flip-flop to the selection circuit in a fourth period after the third period;
• and
• outputting the first data from the selection circuit to the first flip-flop and storing the first data in the first flip-flop in a fifth period after the fourth period.

A circuit comprising:

• a first flip-flop;
• and
• a second flip-flop,
• wherein the first flip-flop comprises first transistors, each including a semiconductor material other than an oxide semiconductor in a semiconductor layer,
• wherein the second flip-flop comprises a second transistor including an oxide semiconductor in a semiconductor layer,
• wherein the second flip-flop includes:
• a memory circuit that includes the second transistor and a storage capacitor;
• and
• an arithmetic portion,
• wherein one electrode of the second transistor is electrically connected to a first electrode of the storage capacitor,
• wherein the arithmetic portion includes a third transistor, and
• wherein a gate electrode of the third transistor is electrically connected to the one electrode of the second transistor.