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US 8,704,248 B2Granted
Coupled asymmetric quantum confinement structures
AssigneeUniversity of Seoul Industry Cooperation Foundation
InventorDoyeol Ahn
Life of this patent
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Abstract
Implementations and techniques for coupled asymmetric quantum confinement structures are generally disclosed.
Claims12
An integrated circuit, comprising:
- a first logic module;
- a second logic module;
- and a coupled asymmetric quantum confinement structure communicatively coupling the first logic module to the second logic module, wherein the coupled asymmetric quantum confinement structure comprises:
- a first quantum confinement structure and a second quantum confinement structure, wherein each quantum confinement structure comprises a first cladding layer, an inner layer formed on the first cladding layer, a second cladding layer formed on the inner layer, an n+ region and a p+ region formed in the first cladding layer, and a first gate electrode formed on the second cladding layer, the n+ and the p+ regions to inject charge carriers into the inner layer and the first gate electrode being configured to deliver a first gate voltage, wherein the second quantum confinement structure is coupled in series with the first quantum confinement structure, wherein the second quantum confinement structure comprises at least one asymmetric physical dimension as compared to the first quantum confinement structure, and wherein the coupled first and second quantum confinement structures are capable of influencing a delay and/or frequency of an optical signal.
1 more element
An integrated circuit, comprising:
- a first logic module;
- a second logic module;
- and
- a coupled asymmetric quantum confinement structure communicatively coupling the first logic module to the second logic module, wherein the coupled asymmetric quantum confinement structure comprises:
- a first quantum confinement structure comprising a first cladding layer, an inner layer formed on the first cladding layer, a second cladding layer formed on the inner layer, an n+ region and a p+ region formed in the first cladding layer, and a first gate electrode formed on the second cladding layer, the n+ and the p+ regions to inject charge carriers into the inner layer and the first gate electrode being configured to deliver a first gate voltage,
- a second quantum confinement structure coupled in series with the first quantum confinement structure, wherein the second quantum confinement structure comprises a first cladding layer, an inner layer formed on the first cladding layer, a second cladding layer formed on the inner layer, an n+ region and a p+ region formed in the first cladding layer, and a second gate electrode formed on the second cladding layer, the n+ and the p+ regions to inject charge carriers into the inner layer and the second gate being configured to deliver a second gate voltage, the second quantum confinement structure comprising at least one asymmetric physical dimension as compared to the first quantum confinement structure, and
- wherein the coupled first and second quantum confinement structures are capable of modifying a delay and/or frequency of an optical signal.
4 more elements
Dependencies are inferred from the claim text.