Reformed aluminum nitride sintered body and method of producing the same
AssigneeTokuyama Corporation
InventorsYuriko Kaito, Yukihiro Kanechika, Masanobu Azuma
Life of this patent
Estimating the term…
Loading patent…
AssigneeTokuyama Corporation
InventorsYuriko Kaito, Yukihiro Kanechika, Masanobu Azuma
Estimating the term…
[Problems] To provide a method of producing, easily and in a high yield, a reformed aluminum nitride sintered body having very excellent light transmission property which can be favorably used as a light-transmitting cover particularly for light sources having high luminous efficiencies. [Means for Solution] An aluminum nitride sintered body having a concentration of metal impurities excluding aluminum of not more than 150 ppm, an oxygen concentration of not more than 0.5% by weight and a relative density of not less than 95% is used as a starting material. The aluminum nitride sintered body is heat-treated in an oxidizing atmosphere in a temperature region of 1400 to 2000° C. to increase the oxygen concentration by not less than 0.03% by weight.
A reformed aluminum nitride sintered body having a concentration of metal impurities of not more than 150 ppm, an oxygen concentration in a range of 0.09% to 0.45% by weight, a relative density of not less than 95%, a total light transmission factor over a wavelength region of 300 to 800 nm of not less than 67% as measured as a flat plate having a thickness of 0.6 mm, and a rectilinear light transmission factor of not less than 10% for light having a wavelength of 600 nm as measured as a flat plate having a thickness of 0.3 mm.
Dependencies are inferred from the claim text.