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US 8,698,285 B2Granted
Reverse recovery using oxygen-vacancy defects
AssigneeToyota Jidosha Kabushiki Kaisha
InventorsTadashi Misumi, Shinya Iwasaki, Takahide Sugiyama
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Abstract
A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.
Claims4
A semiconductor device comprising:
- a semiconductor substrate;
- a first electrode formed on a first main surface of the semiconductor substrate;
- and
- a second electrode formed on a second main surface of the semiconductor substrate,
- wherein the semiconductor substrate includes:
- a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and
- a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects,
- wherein the density of oxygen-vacancy defects does not have a peak within the semiconductor substrate.
5 more elements
Dependencies are inferred from the claim text.