Back to results
US 8,692,336 B2Granted
Semiconductor device
AssigneePanasonic Corporation
InventorsMasaki Tamaru, Kazuyuki Nakanishi, Hidetoshi Nishimura
Life of this patent
Estimating the term…
Abstract
A well potential supply region is provided in an N-type well region of a cell array. Adjacent gates disposed in both sides of the well potential supply region in the horizontal direction and adjacent gates disposed in further both sides thereof are disposed at the same pitch. In addition, an adjacent cell array includes four gates each of which is opposed to the adjacent gates in the vertical direction. In other words, regularity in the shape of the gate patterns in the periphery of the well potential supply region is maintained.
Claims9
A semiconductor device comprising:
- a plurality of cell arrays, in which a plurality of gates extending in a first direction are arranged and disposed in a second direction orthogonal to the first direction, being arranged and disposed in the first direction,
- wherein each of the plurality of cell arrays includes a first conductive type well region and a second conductive type well region that are formed below the gates and respectively extend in the second direction,
- wherein a first cell array that is one of the plurality of cell arrays includes a first well potential supply region into which impurities of the same conductive type as that of the first conductive type well region are implanted in the first conductive type well region, first and second adjacent gates that are respectively disposed in both sides of the first well potential supply region in the second direction, a third adjacent gate that is disposed adjacent to the first adjacent gate in the opposite side to the first well potential supply region, and a fourth adjacent gate that is disposed adjacent to the second adjacent gate in the opposite side to the first well potential supply region,
- wherein the first, the second, the third, and the fourth adjacent gates are disposed at the same pitch in the second direction,
- wherein a first adjacent cell array adjacent to the first cell array in the first direction among the plurality of cell arrays includes four gates each of which is opposed to at least one of the first, the second, the third, and the fourth adjacent gates in the first direction,
- wherein a second well potential supply region into which impurities of the same conductive type as that of the first conductive type well region are implanted is formed between the first adjacent gate and the third adjacent gate, and
- wherein the first, the second, and the third adjacent gates are dummy gates.
4 more elements
A semiconductor device comprising:
- a plurality of cell arrays, in which a plurality of gates extending in a first direction are arranged and disposed in a second direction orthogonal to the first direction, being arranged and disposed in the first direction,
- wherein each of the plurality of cell arrays includes a first conductive type well region and a second conductive type well region that are formed below the gates and respectively extend in the second direction,
- wherein a first cell array that is one of the plurality of cell arrays includes a first well potential supply region into which impurities of the same conductive type as that of the first conductive type well region are implanted in the first conductive type well region, first and second adjacent gates that are respectively disposed in both sides of the first well potential supply region in the second direction, a third adjacent gate that is disposed adjacent to the first adjacent gate in the opposite side to the first well potential supply region, and a fourth adjacent gate that is disposed adjacent to the second adjacent gate in the opposite side to the first well potential supply region,
- wherein the first, the second, the third, and the fourth adjacent gates are disposed at the same pitch in the second direction,
- wherein a first adjacent cell array adjacent to the first cell array in the first direction among the plurality of cell arrays includes four gates each of which is opposed to at least one of the first, the second, the third, and the fourth adjacent gates in the first direction, and
- wherein the first, the second, and the third adjacent gates are dummy gates.
3 more elements
Dependencies are inferred from the claim text.