Ion implantation apparatus and control method thereof

A hybrid-type ion implantation apparatus having a configuration in which reciprocating scanning in a horizontal direction is performed by a beam scanner using an ion beam extracted from an ion source, and the scanned ion beam is parallelized, in which uniformity in a horizontal ion beam density distribution of the parallelized ion beam is controlled by adjustment of a scanning speed of the beam scanner and is secured, and in which a wafer is moved at a mechanical scanning speed in a vertical direction orthogonal to a beam scanning direction, and the mechanical scanning speed is controlled by real time beam measurement feedback to secure uniformity of a vertical ion implantation distribution in the wafer,

• wherein a vertical profile, a horizontal profile, and an integrated current value of the ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device, and
• the hybrid-type ion implantation apparatus comprises a control device configured to simultaneously perform, at a beam current adjustment stage before ion implantation, adjustment of a beam current to the preset value of the beam current, and adjustment of a vertical beam profile, on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.

A control method of a hybrid-type ion implantation apparatus having a configuration in which reciprocating scanning in a horizontal direction is performed by a beam scanner using an ion beam extracted from an ion source, and the scanned ion beam is parallelized, in which uniformity in a horizontal ion beam density distribution of the parallelized ion beam is controlled by adjustment of a scanning speed of the beam scanner and is secured, and in which a wafer is moved at a mechanical scanning speed in a vertical direction orthogonal to a beam scanning direction, and the mechanical scanning speed is controlled by real time beam measurement feedback to secure uniformity of a vertical ion implantation distribution in the wafer,

• wherein a vertical profile, a horizontal profile, and an integrated current value of the ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device, and
• at a beam current adjustment stage before ion implantation, adjustment of a beam current to a preset value of the beam current, and adjustment of a horizontal beam size that is necessary to secure the uniformity of the horizontal ion beam density distribution are simultaneously performed on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.

A control method of a hybrid-type ion implantation apparatus having a configuration in which reciprocating scanning in a horizontal direction is performed by a beam scanner using an ion beam extracted from an ion source, and the scanned ion beam is parallelized, in which uniformity in a horizontal ion beam density distribution of the parallelized ion beam is controlled by adjustment of a scanning speed of the beam scanner and is secured, and in which a wafer is moved at a mechanical scanning speed in a vertical direction orthogonal to a beam scanning direction, and the mechanical scanning speed is controlled by real time beam measurement feedback to secure uniformity of a vertical ion implantation distribution in the wafer,

• wherein a vertical profile, a horizontal profile, and an integrated current value of the ion beam are measured by a plurality of stationary beam measuring instruments and a movable or stationary beam measuring device, and
• at a beam current adjustment stage before ion implantation, adjustment of a beam current to a preset value of the beam current, and adjustment of a vertical beam profile are simultaneously performed on the basis of a measurement value of the stationary beam measuring instruments and the movable or stationary beam measuring device.