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US 8,691,476 B2Granted
EUV mask and method for forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChing-Fang Yu, Ting-Hao Hsu, Sheng-Chi Chin
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Abstract
An extreme ultraviolet (EUV) mask can be used in lithography, such as is used in the fabrication of a semiconductor wafer. The EUV mask includes a low thermal expansion material (LTEM) substrate and a reflective multilayer (ML) disposed thereon. A capping layer is disposed on the reflective ML and a patterned absorption layer disposed on the capping layer. The pattern includes an antireflection (ARC) type pattern.
Claims20
An extreme ultraviolet (EUV) mask comprising:
- a substrate;
- a reflective multilayer (ML) over the substrate;
- a capping layer over on the reflective ML;
- an absorption pattern over the capping layer, wherein the absorption pattern includes an antireflection (ARC) pattern;
- and
- a trench extending through the ARC pattern into the absorption pattern towards the capping layer such that a portion of the absorption pattern extends from a bottommost surface of the trench to a top surface of the capping layer.
3 more elements
An extreme ultraviolet (EUV) mask comprising:
- a substrate;
- a reflective multilayer (ML) over the substrate;
- a capping layer over the reflective ML;
- an absorption pattern over the capping layer;
- and
- an antireflection (ARC) layer formed over the capping layer, and
- wherein a first trench extends through the ARC layer to the capping layer and a second trench extends through the ARC layer and terminates in the absorption layer.
4 more elements
Dependencies are inferred from the claim text.