Lithography method and device
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorsChristophe Martinez, Pascal Boulitreau, Fabien Laulagnet
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Abstract
An installation and method for etching at least one wafer coated with an etch-ready, blank photosensitive layer is disclosed. In accordance with an embodiment, the wafer has thickness irregularities, wherein the wafer is arranged to be able to be submitted to irradiation-beam scanning, a sheet transparent to the radiation to which the photosensitive layer is sensitive covers the wafer, and a probe beam intended to reflect on the upper portion of the sheet perpendicularly to the irradiation beam spot on the photosensitive layer is provided.
Claims11
An installation for etching at least one wafer coated with a blank photosensitive layer (32), ready to be etched, this wafer having thickness irregularities, wherein:
- the wafer (30) is arranged to be able to be submitted to a scanning of an irradiation beam,
- a sheet (33) transparent to the radiation to which the photosensitive layer is sensitive covers the wafer, and
- a probe beam intended to reflect on the upper portion of said sheet perpendicularly to the irradiation beam spot on the photosensitive layer is provided.
An installation for etching a plurality of wafers coated with a blank photosensitive layer (32), ready to be etched, thickness irregularities being formed between the wafers, wherein:
- the wafer (30) is arranged to be able to be submitted to the scanning of an irradiation beam,
- a sheet (33) transparent to the radiation to which the photosensitive layer is sensitive covers the wafers, and
- a probe beam intended to reflect on the upper portion of said sheet perpendicularly to the irradiation beam spot on the photosensitive layer is provided.
Dependencies are inferred from the claim text.