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US 8,667,654 B2Granted
Method for manufacturing a polycrystalline dielectric layer
AssigneeSTMicroelectronics (Crolles 2) SAS
InventorMickael Gros-Jean
Life of this patent
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Abstract
A method manufactures a capacitor having polycrystalline dielectric layer between two metallic electrodes. The dielectric layer is formed by a polycrystalline growth of a dielectric metallic oxide on one of the metallic electrodes. At least one polycrystalline growth condition of the dielectric oxide is modified during the formation of the polycrystalline dielectric layer, which results in a variation of the polycrystalline properties of the dielectric oxide within the thickness of said layer.
Claims13
A method for manufacturing a capacitor, comprising:
- forming two metal electrodes;
- and
- forming a polycrystalline dielectric layer between the two metal electrodes, forming the dielectric layer including performing a polycrystalline growth of a single dielectric metallic oxide on one of the metal electrodes, performing the polycrystalline growth including performing plural polycrystalline growth cycles that form respective thicknesses of the polycrystalline dielectric layer, wherein performing plural polycrystalline growth cycles includes:
- forming a first thickness of the dielectric metallic oxide having a first crystallization rate using a first polycrystalline growth cycle;
- and
- forming, on the first thickness, a second thickness of the dielectric metallic oxide having a second crystallization rate using a second polycrystalline growth cycle that has at least one growth condition that is different than in the first polycrystalline growth cycle, the first and second crystallization rates being within 10 percent of one another.
3 more elements
A method, comprising:
- forming a dielectric layer, the forming including:
- forming a first polycrystalline dielectric sublayer by performing a first polycrystalline growth phase using a first set of growth conditions and a set of chemical precursors, the first polycrystalline dielectric sublayer having a first crystallization rate;
- and
- forming a second polycrystalline dielectric sublayer on the first polycrystalline sublayer by performing a second polycrystalline growth phase using a second set of growth conditions and the set of chemical precursors, the second polycrystalline dielectric sublayer having a second crystallization rate that is within 10 percent of the first crystallization rate.
1 more element
Dependencies are inferred from the claim text.