Method for supplying gas with flow rate gradient over substrate
AssigneeASM IP Holding B.V.
InventorsDai Ishikawa, Kiyohiro Matsushita
Life of this patent
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Abstract
A method for supplying gas over a substrate in a reaction chamber wherein a substrate is placed on a pedestal, includes: supplying a first gas from a first side of the reaction chamber to a second side of the reaction chamber opposite to the first side; and adding a second gas to the first gas from sides of the reaction chamber other than the first side of the reaction chamber so that the second gas travels from sides of the substrate other than the first side in a downstream direction.
Claims20
A method for supplying gas over a substrate in a reaction chamber wherein a substrate is placed on a pedestal, said reaction chamber having a gas-ejecting periphery on a plane, from which gas is ejected, said method comprising:
- supplying a first gas from the gas-ejecting periphery from a first side of the reaction chamber to a second side of the reaction chamber opposite to the first side in a horizontal direction passing through an axis of the reaction chamber so that the first gas travels over the substrate in a main stream from a first side of the substrate to a second side of the substrate opposite to the first side in a horizontal direction passing across a center of the substrate;
- and
- supplying a second gas from the gas-ejecting periphery from sides of the reaction chamber other than the first side of the reaction chamber toward the main stream, wherein the first gas and the second gas are the same gas which is ejected in three or more directions, unevenly with respect to the gas-ejecting periphery, so that the second gas travels over the substrate in auxiliary streams from sides of the substrate other than the first side in a downstream direction of the main stream, said main stream being predominant relative to said auxiliary streams.
A UV irradiation apparatus comprising:
- a reaction chamber;
- a pedestal disposed inside the reaction chamber, for loading a substrate thereon;
- a UV irradiation unit disposed above the reaction chamber;
- and
- a circular flange disposed between the reaction chamber and the UV irradiation unit, said circular flange being provided with a UV transmission window disposed above the pedestal and gas nozzles,
- wherein the gas nozzles are provided along the circumference of the circular flange and directed to a center of a substrate when loaded and comprise first gas nozzles for supplying a first gas disposed at a first side of the flange and second gas nozzles for supplying a second gas disposed at sides other than the first side of the flange so that the first gas travels over the substrate in a main stream from a first side of the substrate to a second side of the substrate opposite to the first side in a horizontal direction passing across a center of the substrate, and the second gas travels over the substrate in auxiliary streams from sides of the substrate other than the first side in a downstream direction of the main stream, said main stream being predominant relative to said auxiliary streams, wherein the first gas and the second gas are the same gas which can be ejected in three or more directions, unevenly with respect to the circumference of the flange, to form the main stream and the auxiliary streams, wherein the first gas nozzles have higher conductance than do the second gas nozzles.
Dependencies are inferred from the claim text.