Rapid conductive cooling using a secondary process plane

A method for thermally treating a substrate, comprising:

• transferring a substrate at a first temperature to a substrate support in a chamber, the chamber having a heating source and a cooling source disposed in opposing portions of the chamber;
• heating the substrate to a second temperature during a first time period while the substrate is disposed on the substrate support;
• moving the substrate support between the heating source and the cooling source;
• heating the substrate to a third temperature during a second time period while the substrate is disposed on the substrate support;
• and
• cooling the substrate in the chamber to a fourth temperature that is substantially equal to the second temperature during the second time period.

A method for thermally treating a substrate, comprising:

• transferring a substrate at a first temperature that is at or near room temperature to a substrate support in a chamber, the substrate support being adjacent a heating source disposed in a first end of the chamber;
• heating the substrate to a second temperature during a first time period while the substrate is disposed on the substrate support;
• heating the substrate to a third temperature during a second time period while the substrate is disposed on the substrate support;
• and
• moving the substrate while the substrate is disposed on the substrate support toward a cooling source disposed in an opposing second end of the chamber to cool the substrate to a fourth temperature that is substantially equal to the second temperature during the second time period.