Stacked body-contacted field effect transistor
AssigneeRF Micro Devices, Inc.
InventorDaniel Charles Kerr
Life of this patent
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Abstract
The present disclosure relates to a stacked body-contacted field effect transistor (FET) that includes multiple body-contacted FETs coupled in series and a lateral isolation band encircling a periphery of the multiple FETs. The multiple FETs include a first end FET having a first body, which is not directly connected to any body of any other of the multiple FETs, and a second end FET having a second body, which is not directly connected to any body of any other of the multiple FETs. The multiple FETs may include inner FETs that incorporate merged source-drains to save space. By keeping the bodies electrically separated from one another, the full benefits of body-contacting may be realized. However, by incorporating multiple FETs within a single lateral isolation band further saves space.
Claims16
A method for forming a first stacked body-contacted field effect transistor (FED comprising:
- providing an insulating layer of a semiconductor die;
- providing a thin-film semiconductor device layer of the semiconductor die over the insulating layer;
- forming a body of each of a first plurality of FETs in at least a part of the thin-film semiconductor device layer;
- forming a polysilicon layer over the thin-film semiconductor device layer;
- forming a gate of the each of the first plurality of FETs in at least a part of the polysilicon;
- and
- forming a lateral isolation band encircling a periphery of the first plurality of FETs, such that the first plurality of FETs is coupled in series and comprises:
- a first end FET having a first drain, a first gate, a first merged source-drain, and a first body, which is not directly connected to any body of any other of the first plurality of FETs, such that the first merged source-drain is adapted to function as a first source of the first end FET;
- and
- a second end FET having a second source, a second gate, and a second body, which is not directly connected to any body of any other of the first plurality of FETs,
- wherein the lateral isolation band laterally isolates the first plurality of FETs from other devices in the semiconductor die.
A method of forming a first stacked body-contacted field effect transistor (FED comprising:
- providing a first plurality of FETs coupled in series such that:
- a first end FET has a first drain, a first gate, a first merged source-drain, and a first body, which is not directly connected to any body of any other of the first plurality of FETs, such that the first merged source-drain is adapted to function as a first source of the first end FET;
- and
- a second end FET having a second source, a second gate, and a second body, which is not directly connected to any body of any other of the first plurality of FETs;
- and
- providing a lateral isolation band encircling a periphery of the first plurality of FETs, wherein the lateral isolation band laterally isolates the first plurality of FETs from other devices in a semiconductor die.
Dependencies are inferred from the claim text.