Copper bonding wire for semiconductor device and bonding structure thereof
AssigneesNippon Steel & Sumikin Materials Co., Ltd., Nippon Micrometal Corporation
InventorsTomohiro Uno, Takashi Yamada, Atsuo Ikeda
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Abstract
A bonding structure and a copper bonding wire for semiconductor device include a ball-bonded portion formed by bonding to the aluminum electrode a ball formed on a front end of the copper bonding wire. After being heated at any temperature between 130° C. and 200° C., the ball-bonded portion exhibits a relative compound ratio R1 of 40-100%, the relative compound ratio R1 being a ratio of a thickness of a Cu—Al intermetallic compound to thicknesses of intermetallic compounds that are composed of Cu and Al and formed on a cross-sectional surface of the ball-bonded portion.
Claims14
A bonding structure of a copper bonding wire connected to an electrode of a semiconductor device through a ball-bonded portion obtained by bonding to an aluminum electrode a ball portion formed on a front end of said copper bonding wire, wherein said ball-bonded portion exhibits, on a cross-sectional surface thereof, a relative compound ratio R1 of 50-100% after being heated at any temperature in a range of 130-200° C., said relative compound ratio R1 being a ratio of a thickness of an intermetallic compound of a CuAl phase to a total thickness of intermetallic compounds that are composed of Cu and Al and formed on a cross-sectional surface of said ball-bonded portion.
A copper bonding wire for semiconductor device connected to an electrode of a semiconductor device through a ball-bonded portion obtained by bonding to an aluminum electrode a ball portion formed on a front end of said copper bonding wire, wherein said ball-bonded portion exhibits, on a cross-sectional surface thereof, a relative compound ratio R1 of 50-100% after being heated at any temperature in a range of 130-200° C., said relative compound ratio R1 being a ratio of a thickness of an intermetallic compound of a CuAl phase to a total thickness of intermetallic compounds that are composed of Cu and Al and formed on a cross-sectional surface of said ball-bonded portion.
Dependencies are inferred from the claim text.