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US 8,642,405 B2Granted
Process for production of SOI substrate and process for production of semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorTakeshi Fukunaga
Life of this patent
Estimating the term…
Abstract
A process for producing an adhered SOI substrate without causing cracking and peeling of a single-crystal silicon thin film. The process consists of selectively forming a porous silicon layer in a single-crystal semiconductor substrate, adding hydrogen into the single-crystal semiconductor substrate to form a hydrogen-added layer, adhering the single-crystal semiconductor substrate to a supporting substrate, separating the single-crystal semiconductor substrate at the hydrogen-added layer by thermal annealing, performing thermal annealing again to stabilize the adhering interface, and selectively removing the porous silicon layer to give single-crystal silicon layer divided into islands.
Claims44
A method of manufacturing a semiconductor device, said method comprising the steps of:
- forming a first silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;
- adding hydrogen to the first single crystal semiconductor substrate through the first silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
- bonding the first single crystal semiconductor substrate to a second substrate with the first silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
- separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a semiconductor layer is formed over the second substrate;
- forming a single crystal semiconductor island by etching a portion of the semiconductor layer;
- heating the single crystal semiconductor island at a temperature within a range of 900 to 1200° C.;
- forming a gate electrode over the single crystal semiconductor island;
- forming a metal silicide layer on the gate electrode;
- and
- forming an interlayer insulating film over the metal silicide layer, the interlayer insulating film comprising silicon nitride,
- wherein the interlayer insulating film is in contact with an upper surface of the metal silicide layer.
8 more elements
A method of manufacturing a semiconductor device, said method comprising the steps of:
- forming a first silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;
- adding hydrogen to the first single crystal semiconductor substrate through the first silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
- bonding the first single crystal semiconductor substrate to a second silicon oxide film formed on a second substrate with the first silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
- separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a semiconductor layer is formed over the second substrate;
- forming a single crystal semiconductor island by etching a portion of the semiconductor layer;
- heating the single crystal semiconductor island at a temperature within a range of 900 to 1200° C.,
- forming a gate electrode over the single crystal semiconductor island;
- forming a metal silicide layer on the gate electrode;
- and
- forming an interlayer insulating film over the metal silicide layer, the interlayer insulating film comprising silicon nitride,
- wherein the interlayer insulating film is in contact with an upper surface of the metal silicide layer.
8 more elements
A method of manufacturing a semiconductor device, said method comprising the steps of:
- forming a first silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;
- adding hydrogen to the first single crystal semiconductor substrate through the first silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
- bonding the first single crystal semiconductor substrate to a second silicon oxide film formed on a second substrate with the first silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
- separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a semiconductor layer is formed over the second substrate;
- heating the semiconductor layer to stabilize an adhering interface between the first silicon oxide film and the second silicon oxide film;
- forming a single crystal semiconductor island by etching a portion of the semiconductor layer;
- heating the single crystal semiconductor island at a temperature within a range of 900 to 1200° C.,
- forming a gate electrode over the single crystal semiconductor island;
- forming a metal silicide layer on the gate electrode;
- and
- forming an interlayer insulating film over the metal silicide layer, the interlayer insulating film comprising silicon nitride,
- wherein the interlayer insulating film is in contact with an upper surface of the metal silicide layer.
9 more elements
A method of manufacturing a semiconductor device, said method comprising the steps of:
- forming a first silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;
- adding hydrogen to the first single crystal semiconductor substrate through the first silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
- bonding the first single crystal semiconductor substrate to a second substrate with the first silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
- separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a semiconductor layer is formed over the second substrate;
- forming a single crystal semiconductor island by etching a portion of the semiconductor layer;
- heating the single crystal semiconductor island at a temperature within a range of 900 to 1200° C.;
- forming a gate insulating film on the single crystal semiconductor island;
- forming a gate electrode comprising poly silicon over the single crystal semiconductor island with the gate insulating film interposed therebetween;
- forming a side wall comprising silicon nitride adjacent to a side surface of the gate electrode;
- forming a metal silicide layer on the gate electrode;
- and
- forming an interlayer insulating film over the metal silicide layer and the side wall, the interlayer insulating film comprising silicon nitride,
- wherein the interlayer insulating film is in contact with an upper surface of the metal silicide layer.
10 more elements
A method of manufacturing a semiconductor device, said method comprising the steps of:
- forming a first silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;
- adding hydrogen to the first single crystal semiconductor substrate through the first silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
- bonding the first single crystal semiconductor substrate to a second silicon oxide film formed on a second substrate with the first silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
- separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a semiconductor layer is formed over the second substrate;
- forming a single crystal semiconductor island by etching a portion of the semiconductor layer;
- heating the single crystal semiconductor island at a temperature within a range of 900 to 1200° C.;
- forming a gate insulating film on the single crystal semiconductor island;
- forming a gate electrode comprising polysilicon over the single crystal semiconductor island with the gate insulating film interposed therebetween;
- forming a side wall comprising silicon nitride adjacent to a side surface of the gate electrode with,
- forming a metal silicide layer on the gate electrode;
- and
- forming an interlayer insulating film over the metal silicide layer and the side wall, the interlayer insulating film comprising silicon nitride,
- wherein the interlayer insulating film is in contact with an upper surface of the metal silicide layer.
10 more elements
A method of manufacturing a semiconductor device, said method comprising the steps of:
- forming a first silicon oxide film on a first single crystal semiconductor substrate, the first single crystal semiconductor substrate comprising silicon;
- adding hydrogen to the first single crystal semiconductor substrate through the first silicon oxide film to form a hydrogen added layer in the first single crystal semiconductor substrate;
- bonding the first single crystal semiconductor substrate to a second silicon oxide film formed on a second substrate with the first silicon oxide film disposed between the first single crystal semiconductor substrate and the second substrate;
- separating the first single crystal semiconductor substrate at the hydrogen added layer by a heat treatment so that a semiconductor layer is formed over the second substrate;
- heating the semiconductor layer to stabilize an adhering interface between the first silicon oxide film and the second silicon oxide film;
- forming a single crystal semiconductor island by etching a portion of the semiconductor layer;
- heating the single crystal semiconductor island at a temperature within a range of 900 to 1200° C.;
- forming a gate insulating film on the single crystal semiconductor island;
- forming a gate electrode comprising polysilicon over the single crystal semiconductor island with the gate insulating film interposed therebetween;
- forming a side wall comprising silicon nitride adjacent to a side surface of the gate electrode,
- forming a metal silicide layer on the gate electrode;
- and
- forming an interlayer insulating film over the metal silicide layer and the side wall, the interlayer insulating film comprising silicon nitride,
- wherein the interlayer insulating film is in contact with an upper surface of the metal silicide layer.
11 more elements
Dependencies are inferred from the claim text.