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US 8,633,115 B2Granted
Methods for atomic layer etching
AssigneeApplied Materials, Inc.
InventorsMei Chang, Joseph Yudovsky
Life of this patent
Estimating the term…
Abstract
Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.
Claims11
A processing method comprising:
- laterally moving a surface beneath a gas distribution plate comprising a plurality of elongate gas ports including a first gas outlet to deliver a first reactive gas, the first reactive gas comprising a fluorine-containing compound;
- delivering the first reactive gas to the surface to form an etch layer on the surface;
- locally changing the temperature of the surface from a first temperature to a second temperature, the second temperature being sufficient to vaporize the etch layer;
- and
- locally removing the vaporized etch layer from the surface,
- wherein the at least one portion of the surface is being exposed to the first reactive gas while the local temperature of a different portion of the surface is being changed.
3 more elements
A method of processing a substrate comprising:
- laterally moving a surface comprising an oxide beneath a gas distribution plate comprising a plurality of elongate gas ports including a first gas outlet to deliver a first reactive gas and a second gas outlet to deliver a second reactive gas;
- delivering the first reactive gas to the surface to form a first reactive layer on the surface, the first reactive gas comprising one or more of ammonia and water;
- purging unreacted first reactive gas;
- delivering the second reactive gas to the surface to react with the first reactive layer to form an etch layer on the surface, the second reactive gas comprising hydrofluoric acid;
- purging unreacted second reactive gas;
- locally changing temperature of the surface from a first temperature to a second temperature, the second temperature being sufficient to vaporize the etch layer;
- and
- purging the surface of the vaporized etch layer,
- wherein at least one portion of the surface is being exposed to the first reactive gas while at least one different portion of the surface is being exposed to the second reactive gas and the local temperature of a different portion of the surface is being changed.
6 more elements
Dependencies are inferred from the claim text.