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US 8,629,047 B2Granted
Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsZhiyuan Cheng, Calvin Sheen
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Abstract
Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.
Claims20
A method comprising:
- forming a resonant tunneling diode (RTD)-based static random access memory (SRAM) circuit, the RTD-based SRAM circuit having a perimeter defining an RTD-based SRAM cell area, the forming the RTD-based SRAM circuit comprising:
- forming a transistor having a gate length above a substrate, the substrate including a first crystalline material, and
- forming a first RTD proximate an opening disposed above the substrate, the opening comprising a non-crystalline sidewall, the first RTD being coupled to a source or a drain of the transistor, the first RTD including a crystalline material lattice-mismatched to the first crystalline material.
A method comprising:
- forming a first transistor on a substrate, the substrate comprising a first crystalline material;
- forming a dielectric layer over the substrate, the dielectric layer having a first opening to the first crystalline material of the substrate;
- and
- forming a first tunneling diode, the tunneling diode comprising a second crystalline material in the first opening, the second crystalline material being lattice mismatched to the first crystalline material, the first tunneling diode being electrically coupled to the first transistor.
1 more element
A method comprising:
- forming a tunneling diode structure in an opening of a dielectric layer over a substrate, the substrate comprising a first crystalline material, the tunneling diode structure comprising a second crystalline material lattice mismatched to the first crystalline material, the second crystalline material comprising defects arising from the lattice mismatch, a majority of the defects terminating at a sidewall of the second crystalline material;
- and
- forming a magnetic tunnel junction structure over the tunneling diode, the magnetic tunnel junction structure comprising a magnetic pinned layer over the tunneling diode, a tunnel barrier layer over the magnetic pinned layer, and a magnetic free layer over the barrier layer.
Dependencies are inferred from the claim text.