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US 8,623,288 B1Granted
Apparatus and methods for high density nanowire growth
AssigneeNanosys, Inc.
InventorsRobert S. Dubrow, Carlos Casillas
Life of this patent
Estimating the term…
Abstract
Methods and apparatus for high density nanowire growth are presented. Methods of making a nanowire growth cartridge assembly are also provided, as are nanowire growth cartridge assemblies.
Claims13
A method for producing nanowires, comprising:
- providing a cartridge assembly having a plurality of support layers, wherein a spacing between adjacent support layers is a set distance, and wherein each support layer has opposing first and second surfaces, wherein a plurality of catalysts are disposed on at least the first surface of each layer;
- placing the cartridge assembly in a nanowire growth chamber;
- and
- providing a precursor gas in the nanowire growth chamber, whereby nanowires grow on the first surface of each layer.
1 more element
A method for making a nanowire growth cartridge assembly, comprising:
- providing a sheet of material comprising spacers, each spacer having a set height;
- forming the sheet of material into a coiled sheet of material having a longitudinal axis and a plurality of support layers extending around the longitudinal axis, the plurality of support layers each having opposing first and second surfaces and being spaced apart by distances corresponding to the heights of the spacers;
- and
- disposing a plurality of catalysts on at least the first surface of each support layer.
1 more element
A nanowire growth cartridge assembly, comprising:
- a plurality of support layers wherein a spacing between adjacent support layers is a set distance, and wherein each support layer has opposing first and second surfaces;
- and
- a plurality of catalysts disposed on at least the first surface of each support layer.
Dependencies are inferred from the claim text.