High lifetime consumable silicon nitride-silicon dioxide plasma processing components

A plasma processing chamber comprising:

• a substrate holder for supporting a substrate within an interior of the processing chamber;
• a sintered silicon nitride component having an exposed surface adjacent the substrate, wherein the component consists of between about 80 weight % and about 95 weight % high purity silicon nitride and between about 5 weight % and about 20 weight % sintering aid, the sintering aid consisting of high purity silicon dioxide;
• a gas supply supplying process gas to the interior of the processing chamber;
• and
• an energy source supplying energy into the interior of the processing chamber and energizing the process gas into a plasma state for processing the substrate, wherein the component minimizes metallic contamination on a surface of the substrate to below 100×1010 atoms/cm2 during processing by the plasma,
• wherein the component has a total metallic contamination of below 100 ppm, and
• wherein the component has been subjected to uniaxial pressing or cold isostatic pressing followed by hot isostatic pressing.