Broad area laser having an epitaxial stack of layers and method for the production thereof

A method for producing a broad stripe laser comprising the steps of:

• epitaxial growth of a layer stack on a growth substrate, wherein the layer stack has a top side and an underside;
• top-side etching of the layer stack at two opposite edges of the layer stack in such a way that a broad stripe laser structure is formed;
• and
• top-side etching of trenches in the layer stack in the region of the broad stripe laser structure in such a way that ridges are formed, each having a width of at most 20 μm, wherein adjacent ridges are at a distance from one another of at most 20 μm,
• wherein the trenches each have a base area having a curvature, and
• wherein the curvatures of the base areas of all the trenches form a single convex lens shape.

A broad stripe laser comprising an epitaxial layer stack, which contains an active, radiation-generating layer and has a top side and an underside,

• wherein the layer stack has trenches in which at least one layer of the layer stack is at least partly removed and which lead from the top side in the direction of the underside,
• wherein the layer stack has on the top side ridges each adjoining the trenches, such that the layer stack is embodied in striped fashion on the top side, and
• wherein the ridges and the trenches respectively have a width of at most 20 μm,
• wherein the trenches each have a base area having a non-zero curvature, and
• wherein the non-zero curvatures of the base areas of all the trenches together form a single convex lens shape.