Vertical cavity surface emitting laser element, vertical cavity surface emitting laser array element, vertical cavity surface emitting laser device, light source device, and optical module

A surface emitting laser element, comprising:

• a substrate made of GaAs;
• a lower multilayer film reflecting mirror formed on the substrate and formed of a periodic structure of a low-refractive-index layer made of AlxGa1-xAs, where 0.8≦x≦1, and a high-refractive-index layer formed of AlyGa1-yAs, where 0≦y≦x, at least one of the low-refractive-index layer and the high-refractive-index layer being of n-type;
• an upper multilayer film reflecting mirror provided above the lower multilayer film reflecting mirror, and formed of a periodic structure of a low-refractive-index layer and a high-refractive-index layer;
• an active layer provided between the lower multilayer film reflecting mirror and the upper multilayer film reflecting mirror;
• and
• a p-side electrode and an n-side electrode which are provided above the substrate, and configured to inject an electric current into the active layer,
• wherein
• the lower multilayer film reflecting mirror is added with an n-type dopant, and
• a warp of the substrate is equal to or more than a warp of δ in μm defined by equation (1) below, where xave denotes an average Al composition in the lower multilayer film reflecting mirror, nave in cm−3 denotes an average addition concentration of the n-type dopant, d in μm denotes a thickness of the substrate, D in inches denotes a length of a longest one of lines each extending from one of vertexes of the substrate through a center of gravity of the substrate to an edge of the substrate
• δ
• =
• 1.71
• ×
• 10
• 6
• ⁢
• λ
• ×
• [
• (
• 1.39
• ×
• 10
• -
• 3
• )
• ⁢
• x
• ave
• -
• (
• 1.28
• ×
• 10
• -
• 23
• )
• ⁢
• n
• ave
• ]
• ×
• (
• D
• d
• )
• 2
• .
• (
• 1
• )