Semiconductor laser device

A semiconductor laser device comprising:

• a plurality of light emitting sections arranged in strip shapes in parallel, and emitting beams from end faces in an extending direction;
• a plurality of first electrodes arranged along top faces of the light emitting sections, respectively;
• an insulating film covering the plurality of first electrodes, and including contact apertures corresponding to the first electrodes, respectively;
• a plurality of second electrodes arranged in positions different from those of the plurality of light emitting sections, correspondingly to the first electrodes;
• a plurality of wiring layers arranged on the insulating layer, and electrically connecting the second electrodes and the corresponding first electrodes through the contact apertures, respectively;
• and
• a plurality of window regions arranged in correspondence to the light emitting sections, the plurality of window regions defining openings in the insulating film so as to expose the first electrodes, and including at least two window regions having areas different from each other based on a degree of wavelength elongation of a beam in a corresponding light emitting section.