Driving circuit for memory device

A method for programming an electrically programmable non-volatile memory including a plurality of memory cells, the method including the steps of:

• providing a first programming voltage and a second programming voltage to a set of selected memory cells for programming the selected memory cells, the first programming voltage requiring a first transient period for reaching a first target value thereof, and
• maintaining the second programming voltage substantially equal to the first programming voltage during a second transient period required by the second programming voltage to reach a second target value thereof, wherein providing a first programming voltage and a second programming voltage comprises providing a supply voltage higher than the first programming voltage in absolute value and generating the first programming voltage and the second programming voltage from the supply voltage.

A driver circuit for an electrically programmable non-volatile memory device including a plurality of memory cells, comprising:

• a first circuit, responsive to a selection voltage, configured to provide a first programming voltage to first terminals of a selected set of the memory cells, the first programming voltage requiring a first transient period to reach a first target value;
• and
• a second circuit, responsive to the selection voltage, configured to provide a second programming voltage to second terminals of the selected set of the memory cells, wherein the second circuit is configured to maintain the second programming voltage substantially equal to the first programming voltage during a second transient period required by the second programming voltage to reach a second target value, wherein the first circuit comprises a first regulator circuit configured to provide the first programming voltage and wherein the second circuit comprises a second regulator circuit, responsive to the selection voltage, to provide a command voltage, and a buffer circuit, responsive to the first programming voltage and the command voltage, to provide the second programming voltage.

A method for programming an electrically programmable non-volatile memory device including a plurality of memory cells, comprising:

• providing, in response to a selection voltage, a first programming voltage to first terminals of a selected set of the memory cells, the first programming voltage requiring a first transient period to reach a first target value;
• and
• providing, in response to the selection voltage, a second programming voltage to second terminals of the selected set of the memory cells, including maintaining the second programming voltage substantially equal to the first programming voltage during a second transient period required by the second programming voltage to reach a second target value, wherein providing a first programming voltage and a second programming voltage comprises providing a supply voltage higher than the first programming voltage in absolute value and generating the first programming voltage and the second programming voltage from the supply voltage.