Bidirectional resistive memory devices using selective read voltage polarity
AssigneeSamsung Electronics Co., Ltd.
InventorsIn-Gyu Baek, Hyung-Rok Oh, Hong-Sun Hwang
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Abstract
A memory device includes a memory cell array including a plurality of memory cells, each including a bidirectional variable resistance element and an input/output circuit configured to determine a polarity for a read voltage to be applied to a selected memory cell among the plurality of memory cells and to apply the read voltage with the determined polarity to the selected memory cell. The input/output circuit may include a polarity determination circuit configured to determine the polarity responsive to a determination mode signal and a driver circuit configured to apply the read voltage with the determined polarity to the selected memory cell.
Claims18
A memory device comprising:
- a memory cell array comprising a plurality of memory cells, each comprising a bidirectional variable resistance element;
- and
- an input/output circuit configured to determine a polarity for a read voltage to be applied to a selected memory cell among the plurality of memory cells and to apply the read voltage with the determined polarity to the selected memory cell, wherein the input/output circuit is configured to maintain a magnitude of the applied read voltage within a range in which a resistance state of the selected memory cell is not changed.
A memory device comprising:
- a memory cell array comprising a plurality of memory cells, each comprising a variable resistance element and a bidirectional access element;
- and
- an input/output circuit comprising a polarity determination circuit configured to determine a polarity of a read voltage to be applied to a selected memory cell among the plurality of memory cells and a bit line and source line driver circuit configured to apply the read voltage to a bit line and a source line such that the polarity determined by the polarity determination circuit is applied to the selected memory cell, wherein the polarity determination circuit is configured to identify which of a first candidate read voltage and a second candidate read voltage of different polarities enables a larger current to flow in the variable resistance element.
Dependencies are inferred from the claim text.