Multi-layer gallium arsenide-based fresnel phase-shift device for infrared wavelength conversion
AssigneeThe United States of America as represented by the Secretary of the Air Force
InventorsDavid Weyburne, David Bliss, Candace Lynch
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Abstract
A new method for making a nonlinear optical structure for frequency conversion and for using that structure for frequency conversion is described. The nonlinear optical structure is made by depositing alternating contiguous layers of gallium arsenide and aluminum gallium arsenide onto a gallium arsenide substrate. Optical frequency conversion is performed by transmitting a pump laser beam through the structure. The new method is easier to perform than prior art methods.
Claims2
A method for making a nonlinear optical crystal structure, comprising depositing contiguous alternating layers of gallium arsenide and aluminum gallium arsenide onto a substrate, wherein every layer of gallium arsenide is a first thickness greater than about 1 mm and every layer of aluminum gallium arsenide is a second, thinner, thickness.
Dependencies are inferred from the claim text.