Display and method for manufacturing display

A method for manufacturing a display, the method comprising the steps of:

• providing a substrate with a gate insulating layer over the substrate, the gate insulating layer including a plurality of pixels in a matrix pattern;
• forming a first active layer including switching elements for a plurality of pixels formed therefrom, said first active layer located over the gate insulating layer;
• removing a portion of said first active layer;
• and
• forming a second active layer including light sensor elements formed therefrom, said second active layer in place of the removed portion of said first active layer
• wherein,
• the second active layer has a light absorption coefficient that is higher than that of said first active layer and
• said first active layer includes a channel layer.

A method for manufacturing a display, the method comprising the step of:

• providing a substrate with a gate insulating layer over the substrate, the gate insulating layer including a plurality of pixels in a matrix pattern;
• forming a first active layer including switching elements for a plurality of pixels formed therefrom over the gate insulating layer;
• removing a portion of said first active layer;
• and
• forming a second active layer including light sensor elements formed therefrom over the gate insulating layer and in place of the removed portion of said first active layer,
• wherein,
• the second active layer has a different thickness than said first active layer or a different material than said first active layer, and
• said first active layer includes a channel layer.

A method for manufacturing a display, the method comprising the steps of:

• providing a substrate;
• forming a semiconductor film over a first element forming portion and a second element forming portion located on the substrate, and thereafter introducing an impurity into said semiconductor film;
• separating said semiconductor film into island-like shapes in said first element forming portion and said second element forming portion to form a first active layer in said first element forming portion with said semiconductor film;
• removing a portion of said semiconductor film located in a part of said second element forming portion which corresponds to a first active layer;
• and
• forming a second active layer in place of the portion of said semiconductor film removed from said second element forming portion;
• wherein,
• said first active layer includes a switching element, and
• said second active layer includes a light sensor element.