Semiconductor device
AssigneeRenesas Electronics Corporation
InventorsMasakazu Mizokami, Kazuaki Hori
Life of this patent
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AssigneeRenesas Electronics Corporation
InventorsMasakazu Mizokami, Kazuaki Hori
Estimating the term…
A variable gain amplifier circuit includes output nodes, a plurality of amplifiers, and a detection circuit. The amplifiers are coupled in parallel with each other between the output nodes and a reference node and selectively assume an operating state in accordance with a control signal. The detection circuit outputs a detection signal according to the magnitude of an input signal to each amplifier. Each amplifier includes a first transistor, a second transistor, and a bias circuit. The first transistor receives, at its control electrode, the input signal or a signal proportional to the input signal. The second transistor is series-coupled to the first transistor between the first reference node and an output node. The bias circuit applies a DC voltage of a magnitude according to the detection signal to a control electrode of the second transistor.
A semiconductor device comprising a variable gain amplifier circuit for amplifying an input signal by a gain according to a control signal,
A semiconductor device comprising a variable gain amplifier circuit which receives first and second control signals and amplifies an input signal by a gain according to the first control signal,
Dependencies are inferred from the claim text.