Back to results
US 8,618,860 B2Granted
System and method of transistor switch biasing in a high power semiconductor switch
AssigneeSiGe Semiconductor Inc.
InventorsLui Lam, Hanching Fuh
Life of this patent
Estimating the term…
Abstract
A circuit and method are provided for switching in a semiconductor based high power switch. Complementary p-type based transistors are utilized along insertion loss insensitive paths allowing biasing voltages to alternate between supply and ground, allowing for negative voltage supplies and blocking capacitors to be dispensed with, while improving performance.
Claims20
A series-shunt switch comprising:
- a series switch including a plurality of first transistors coupled along a signal path formed between a radio frequency (RF) terminal and an antenna;
- and
- a shunt switch including a plurality of second transistors coupled along a shunt path formed between a shunt end and one of the RF terminal and the antenna, the first and second transistors being complementary, and gates of the first and second transistors being biased with a substantially similar biasing voltage when operating in a series mode and in a shunt mode.
A method of high power switching, the method comprising:
- providing a high power switch having a series switch including a plurality of first transistors and coupled along a signal path formed between a first end and a second end, and having a shunt switch including a plurality of second transistors and coupled along a shunt path formed between a shunt end and one of the first and second ends;
- and
- biasing gates of the first and the second transistors with a substantially similar biasing voltage when the high power switch operates in a series mode and in a shunt mode, the first and the second transistors being complementary.
Dependencies are inferred from the claim text.