Semiconductor contact barrier
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Shi Liu, Chen-Hua Yu
Life of this patent
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Abstract
System and method for reducing contact resistance and improving barrier properties is provided. An embodiment comprises a dielectric layer and contacts extending through the dielectric layer to connect to conductive regions. A contact barrier layer is formed between the conductive regions and the contacts by electroless plating the conductive regions after openings have been formed through the dielectric layer for the contact. The contact barrier layer is then treated to fill the grain boundary of the contact barrier layer, thereby improving the contact resistance. In another embodiment, the contact barrier layer is formed on the conductive regions by electroless plating prior to the formation of the dielectric layer.
Claims20
A semiconductor device comprising:
- a first conductive region in a substrate;
- a first gate electrode over the substrate;
- a first treated conductive material in a physical contact with the first conductive region;
- a second treated conductive material in a physical contact with the first gate electrode;
- a dielectric layer over the first conductive region and over the first gate electrode;
- and
- a first contact extending through the dielectric layer and making an electrical contact with the first treated conductive material.
A semiconductor device comprising:
- a conductive region in a substrate;
- a first grain-filled conductive region in a physical contact with a surface of the conductive region;
- and
- a contact in physical connection with the first grain-filled conductive region.
A method of manufacturing a semiconductor device, the method comprising:
- forming a first conductive region within a substrate;
- depositing a second conductive region over the first conductive region, the second conductive region having a grain boundary;
- filling the grain boundary of the second conductive region to form a grain-filled conductive material;
- depositing a dielectric material over the first conductive region;
- removing a portion of the dielectric material to form an opening;
- and
- placing a conductive material in the opening to make an electrical contact with the grain-filled conductive material.
Dependencies are inferred from the claim text.