Semiconductor device and method of manufacturing the same
AssigneeMitsubishi Electric Corporation
InventorsMika Okumura, Makio Horikawa, Takeshi Murakami
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, electrodes separated from each other and extending from a first main surface in the direction of depth of the semiconductor substrate, and an interconnect portion coupling the electrodes to each other and extending from the first main surface in the direction of depth of the semiconductor substrate without passing through the semiconductor substrate. One of the electrodes is a through electrode passing through the semiconductor substrate to reach a second main surface. For semiconductor devices having through electrodes and vertically stacked on each other, the interconnect portion serves to enhance the degree of design freedom.
Claims10
A semiconductor device comprising:
- a semiconductor substrate having first and second main surfaces;
- a plurality of electrodes separated from each other and extending from said first main surface in depth direction of said semiconductor substrate;
- an interconnect portion coupling any plurality of electrodes of said plurality of electrodes and extending from said first main surface in the depth direction of said semiconductor substrate without passing through said semiconductor substrate, for electrically connecting said any plurality of electrodes to each other, the interconnect portion formed using only one or more straight portions, said interconnection portion directly connecting two of the plurality of electrodes;
- and
- a first insulating film provided between said plurality of electrodes and said semiconductor substrate and between said interconnect portion and said semiconductor substrate,
- at least one of said electrodes electrically connected by said interconnect portion being a through electrode passing through said semiconductor substrate and reaching said second main surface.
Dependencies are inferred from the claim text.