Patternable dielectric film structure with improved lithography and method of fabricating same

An interconnect structure comprising:

• a lower patterned and cured low-k material layer located on a surface of a patterned inorganic antireflective coating that is located atop a substrate, wherein said patterned inorganic antireflective coating is a permanent element of said interconnect structure and comprises a single layer of atoms of M, C and H wherein M is at least one of Ta, Ni, Hf and La, and an upper patterned and cured low-k material layer located on said lower patterned and cured low-k material layer, said lower and upper patterned and cured low-k material layers, and said patterned inorganic antireflective coating having conductively filled regions, wherein said lower and upper patterned and cured low-k material layers each comprise a cured functionalized polymer having one or more irradiation/acid-sensitive imageable groups, said functionalized polymer is selected from the group consisting of a carbosilane and an oxycarbosilane.

An interconnect structure comprising:

• at least one patterned and cured low-k dielectric material located on a surface of a patterned inorganic antireflective coating that is located atop a substrate, said patterned inorganic antireflective coating is a permanent element of said interconnect structure and comprises atoms of M, C and H wherein M is selected from the group consisting of Ta, Ni, Hf and La, and said at least one patterned and cured low-k dielectric material and said patterned inorganic antireflective coating having conductively filled regions embedded therein, wherein said at least one patterned and cured low-k dielectric material comprise a functionalized polymer having one or more irradiation/acid-sensitive imageable groups.

An interconnect structure comprising:

• a lower patterned and cured low-k material layer located on a surface of a patterned inorganic antireflective coating that is located atop a substrate, said patterned inorganic antireflective coating is a permanent element of said interconnect structure and comprises atoms of M, C and H wherein M is selected from the group consisting of Ta, Ni, Hf and La, and an upper patterned and cured low-k material layer located on said lower patterned and cured low-k material layer, said lower and upper patterned and cured low-k material layers and said patterned inorganic antireflective coating having conductively filled regions, wherein said lower and upper patterned and cured low-k material layers each comprise a cured functionalized polymer having one or more irradiation/acid-sensitive imageable groups.