Semiconductor device and fabricating method thereof
AssigneeAmkor Technology, Inc.
InventorsJong Sik Paek, Won Chul Do, Eun Sook Sohn
Life of this patent
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Abstract
A semiconductor device and a fabrication method thereof are provided. An electrically conductive elastic member is formed on a semiconductor die, and a conductive bump is formed on the elastic member. Accordingly, since the conductive bump is formed on the elastic member, or to protrude from a top surface of the elastic member, the height and thus diameter of the conductive bump is reduced allowing a fine pitch to be realized. Further, the elastic member is elastic and thus mitigates external impacts from being transferred from the conductive bump to the semiconductor die.
Claims13
A semiconductor device comprising:
- a semiconductor die comprising:
- an active surface comprising a bond pad;
- a first passivation layer on the active surface of the semiconductor die and having an opening therein to expose the bond pad;
- an elastic member on the active surface of the semiconductor die comprising:
- a bottom surface on the first passivation layer;
- a top surface spaced above the first passivation layer;
- and
- a sidewall surface extending between the bottom surface and the top surface;
- a redistribution layer covering the bond pad and the elastic member;
- a second passivation layer formed on the active surface of the semiconductor die and partially exposing the elastic member and the redistribution layer;
- and
- a conductive bump formed on the redistribution layer corresponding to the elastic member, wherein the conductive bump surrounds the top surface of the elastic member and at least the top portion of the sidewall surface of the elastic member.
A semiconductor device comprising:
- a semiconductor die comprising:
- an active surface comprising a bond pad;
- a first passivation layer on the active surface of the semiconductor die and having an opening therein to expose the bond pad;
- an elastic member on the active surface of the semiconductor die;
- a redistribution layer covering the bond pad and the elastic member;
- a second passivation layer formed on the active surface of the semiconductor die and partially exposing the elastic member and the redistribution layer;
- a conductive bump formed on the redistribution layer corresponding to the elastic member;
- and
- a polyimide layer between the first passivation layer and the redistribution layer and between the first passivation layer and the elastic member.
A semiconductor device comprising:
- a semiconductor die comprising:
- an active surface comprising a bond pad;
- a first passivation layer on the active surface of the semiconductor die and having an opening therein to expose the bond pad;
- an elastic member formed on the bond pad;
- an under bump metallurgy (UBM) layer on the elastic member and in contact with the bond pad;
- a second passivation layer formed on the active surface of the semiconductor die and partially exposing the elastic member and the UBM layer;
- and
- a conductive bump formed on the UBM layer corresponding to the elastic member.
A semiconductor device comprising:
- a semiconductor die comprising a bond pad on an active surface of the semiconductor die;
- an elastic member on the active surface of the semiconductor die;
- a redistribution layer on the elastic member and the bond pad, wherein the redistribution layer is formed on a top surface and a sidewall surface of the elastic member;
- and
- a conductive bump on the redistribution layer corresponding to the elastic member, wherein the conductive bump surrounds the top surface and at least the top portion of the sidewall surface of the elastic member.
Dependencies are inferred from the claim text.