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US 8,618,639 B2Granted
Semiconductor structure, semiconductor device having a semiconductor structure, and method for manufacturing a semiconductor structure
AssigneeInfineon Technologies Austria AG
InventorsMathias Plappert, Hans-Joachim Schulze
Life of this patent
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Abstract
According to an embodiment, a semiconductor structure includes a first monocrystalline semiconductor portion having a first lattice constant in a reference direction; a second monocrystalline semiconductor portion having a second lattice constant in the reference direction, which is different to the first lattice constant, on the first monocrystalline semiconductor portion; and a metal layer formed on and in contact with the second monocrystalline semiconductor portion.
Claims10
A semiconductor structure, comprising:
- a first monocrystalline semiconductor portion having a first lattice constant in a reference direction;
- a second monocrystalline semiconductor portion having a second lattice constant in the reference direction, which is different to the first lattice constant, on the first monocrystalline semiconductor portion;
- and
- a metal layer formed on and in contact with the second monocrystalline semiconductor portion, wherein the first monocrystalline semiconductor portion and the second monocrystalline semiconductor portion are made of Si, and wherein the first monocrystalline semiconductor portion has a <100> lattice orientation in the reference direction and the second monocrystalline semiconductor portion has a <111> lattice orientation in the reference direction.
1 more element
A semiconductor device, comprising:
- a semiconductor body comprising:
- a first monocrystalline semiconductor portion having a first lattice constant in a reference direction;
- a second monocrystalline semiconductor portion having a second lattice constant in the reference direction, which is different to the first lattice constant, on the first monocrystalline semiconductor portion;
- at least one pn-junction formed in the first monocrystalline semiconductor portion;
- and
- a metal layer formed on and in ohmic contact with the second monocrystalline semiconductor portion,
- wherein the semiconductor device is a bipolar device comprising a cathode region of a first conductivity type and an anode region of a second conductivity type,
- wherein the at least one pn-junction is formed between the anode region and the cathode region,
- wherein the second monocrystalline semiconductor portion is in direct contact with the cathode region and has the same conductivity type as the cathode region.
6 more elements
A bipolar semiconductor device, comprising:
- a semiconductor body comprising:
- a first monocrystalline semiconductor portion having a first lattice constant in a reference direction;
- a second monocrystalline semiconductor portion having a second lattice constant in the reference direction, which is different to the first lattice constant, on the first monocrystalline semiconductor portion;
- at least one pn-junction formed in the first monocrystalline semiconductor portion;
- a metal layer formed on and in ohmic contact with the second monocrystalline semiconductor portion;
- a source region of a first conductivity type;
- a body region of a second conductivity type in contact with the source region;
- a drift region of the first conductivity type in contact with the body region;
- and
- an emitter region of the second conductivity type,
- wherein the second monocrystalline semiconductor portion is in direct contact with the emitter region and has the same conductivity type as the emitter region.
8 more elements
A unipolar semiconductor device, comprising:
- a semiconductor body comprising:
- a first monocrystalline semiconductor portion having a first lattice constant in a reference direction;
- a second monocrystalline semiconductor portion having a second lattice constant in the reference direction, which is different to the first lattice constant, on the first monocrystalline semiconductor portion;
- at least one pn-junction formed in the first monocrystalline semiconductor portion;
- a metal layer formed on and in ohmic contact with the second monocrystalline semiconductor portion;
- a source region of a first conductivity type;
- a body region of a second conductivity type in contact with the source region;
- a drift region of the first conductivity type in contact with the body region;
- and
- a drain region of the first conductivity type,
- wherein the second monocrystalline semiconductor portion is in direct contact with the drain region and has the same conductivity type as the drain region.
8 more elements
Dependencies are inferred from the claim text.