Semiconductor optical modulator and method for manufacturing the same
AssigneeSumitomo Electric Industries, Ltd.
InventorsYoshihiro Yoneda, Kenji Koyama, Hirohiko Kobayashi
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Abstract
A process to manufacture a semiconductor optical modulator is disclosed, in which the process easily forms a metal film including AuZn for the p-ohmic metal even a contact hole has an enhanced aspect ration. The process forms a mesa including semiconductor layers first, then, buries the mesa by a resin layer sandwiched by insulating films. The resin layer provides an opening reaching the top of the mesa, into which the p-ohmic metal is formed. Another metal film including Ti is formed on the upper insulating film along the opening.
Claims17
A process to manufacture a semiconductor optical modulator, comprising steps of:
- forming a mesa including a plurality of semiconductor layers on a semiconductor substrate;
- burying the mesa by an insulating layer;
- exposing a top of the mesa by forming an opening in the insulating layer;
- forming a first metal film on the insulating layer, along the opening, so as not to extend within the opening, wherein the first metal film includes titanium (Ti);
- and
- covering the exposed top of the mesa and the first metal film on the insulating layer by a second metal film, wherein the second metal film includes a p-contact metal having a composite of gold (AU) and zinc (Zn), and directly contacts the first metal film.
A process to manufacture a semiconductor optical modulator, comprising steps of:
- forming a mesa in a direction, the mesa including a plurality of semiconductor layers on a semiconductor substrate;
- burying the mesa by an insulating layer;
- forming a first metal film on the insulating layer along the direction of the mesa, wherein the first metal film includes titanium (Ti);
- exposing a top of the mesa by etching the insulating layer;
- and
- covering the exposed top of the mesa and the first metal film formed on the insulating layer by a second metal film, wherein the second metal film includes a p-contact metal having a composite of gold (Au) and zinc (Zn), and directly contacts the first metal film.
A semiconductor optical modulator, comprising:
- a waveguide mesa including a plurality of semiconductor layers;
- an insulating layer that buries the mesa, the insulating layer having an opening that exposes a top of the mesa;
- a first metal film including titanium (Ti) disposed on the insulating layer and along an edge of the opening without penetrating inside of the opening;
- and
- a second metal film including a p-contact metal having a composite of gold (Au) and zinc (Zn), the second metal film being in direct contact with the exposed top of the mesa in the opening, and in direct contact with the first metal film.
Dependencies are inferred from the claim text.