Semiconductor device layer structure and method of fabrication

An apparatus, comprising:

• a device integrated into a device layer structure disposed on an insulating layer, wherein a thickness of the insulating layer is in a range of about 0.1 micrometers (μm) to about 10 μm, and a thickness of the device layer structure is in a range from about 0.1 μm to about 10 μm, wherein the device comprises a bulk acoustic wave filter;
• a housing layer arranged so that the insulating layer continuously extends between the housing layer and the insulating layer and the device layer structure is arranged between the housing layer and the insulating layer, the housing layer housing the device by the housing layer forming a cavity disposed between a housing layer surface of the housing layer facing the device layer structure and a device layer structure surface of the device layer structure facing the housing layer with the device bordering the cavity, wherein a total thickness of the housing layer is more than ten times a thickness of the device layer structure, and wherein the housing layer comprises a solid material, a modulus of elasticity of the solid material being greater than about 100 MPa;
• a contact providing an electrical connection between the device and a surface of the housing layer opposite to the device layer structure;
• and
• a molding material surrounding the housing layer and the insulating layer, the molding material directly abutting on a surface of the insulating layer being opposite to the device layer structure.