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US 8,618,615 B2Granted
Semiconductor device and fabrication method thereof
AssigneeHynix Semiconductor Inc.
InventorSe hyun Kim
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Abstract
Disclosed herein is a fabrication method of a semiconductor device to order to increase an operation liability of the semiconductor device. A method for fabricating a semiconductor device comprises forming a recess in a semiconductor substrate, forming a word line in a lower part of the recess, oxidizing a top portion of the word line, and depositing an insulating material in a remained part of the recess.
Claims10
A semiconductor device, comprising:
- a buried word line provided in a recess of a semiconductor substrate;
- an oxide film formed within the recess and on the buried word line;
- an insulating layer provided over the oxide film in the recess;
- and
- first and second doped regions located at both sides, respectively, of the recess,
- wherein the oxide film is obtained by oxidizing an upper portion of the buried word line through an ion-implantation.
3 more elements
Dependencies are inferred from the claim text.