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US 8,618,614 B2Granted
Continuous mesh three dimensional non-volatile storage with vertical select devices
AssigneeSanDisk 3D LLC
InventorRoy E. Scheuerlein
Life of this patent
Estimating the term…
Abstract
A three-dimensional array adapted for memory elements that reversibly change a level of electrical conductance in response to a voltage difference being applied across them. Memory elements are formed across a plurality of planes positioned different distances above a semiconductor substrate. Bit lines to which the memory elements of all planes are connected are oriented vertically from the substrate and through the plurality of planes.
Claims17
A non-volatile storage system, comprising:
- a substrate;
- a monolithic three dimensional array of memory elements positioned above and not in the substrate;
- word lines connected to the memory elements;
- a plurality of word line drivers in the substrate and in communication with the word lines;
- a plurality of bit line drivers in the substrate;
- a plurality of global bit lines in communication with the bit line drivers;
- a plurality of vertically oriented bit lines that are above and not in the substrate, the memory elements in combination with the vertically oriented bit lines and the word lines form a continuous mesh;
- a plurality of vertically oriented select devices that are above and not in the substrate, the vertically oriented select devices are connected to the vertically oriented bit lines and the global bit lines;
- and
- a plurality of select lines connected to the vertically oriented select devices, the select lines are above and not in the substrate.
7 more elements
A non-volatile storage system, comprising:
- a substrate layer;
- select layer positioned above and not in the substrate layer;
- a memory layer positioned above and not in the substrate layer, the memory layer includes:
- a monolithic three dimensional array of memory elements,
- word lines connected to the memory elements, and
- vertically oriented bit lines connected to the memory elements, the memory elements in combination with the vertically oriented bit lines and the word lines form a continuous mesh, the select layer includes select lines, the select layer includes vertically oriented select devices that are connected to the vertically oriented bit lines and the select lines.
3 more elements
Dependencies are inferred from the claim text.