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US 8,618,613 B2Granted
Methods of forming secured metal gate antifuse structures
AssigneeIntel Corporation
InventorsXianghong Tong, Zhanping Chen, Walid M. Hafez, Zhiyong Ma, Sarvesh H. Kulkarni, Kevin X. Zhang, Matthew B. Pedersen, Kevin D. Johnson
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Abstract
Methods of forming and using a microelectronic structure are described. Embodiments include forming a diode between a metal fuse gate and a PMOS device, wherein the diode is disposed between a contact of the metal fuse gate and a contact of the PMOS device, and wherein the diode couples the contact of the metal fuse gate to the contact of the PMOS device.
Claims19
A method comprising:
- forming a metal trace between a metal fuse gate structure and a PMOS device, wherein the metal trace is disposed between a gate structure of the metal fuse gate structure and a source or a drain structure of the PMOS device, and wherein the metal trace is configured to prevent a charge build-up within an un-programmed metal fuse gate structure.
A structure comprising:
- a metal fuse gate structure;
- a PMOS device;
- and
- a metal trace formed between the metal fuse gate structure and the PMOS device, wherein the metal trace is disposed between a gate structure of the metal fuse gate and a source or a drain structure of the PMOS device, and wherein the metal trace is configured to prevent a charge build-up within an un-programmed metal fuse gate structure.
1 more element
Dependencies are inferred from the claim text.