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US 8,618,605 B2Granted
Semiconductor device and method of manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorYong Won Seo
Life of this patent
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Abstract
A semiconductor device includes a first gate electrode buried within a semiconductor substrate, a second gate electrode buried within a silicon growth layer disposed on the semiconductor substrate, and a bit line disposed on an interlayer insulating layer disposed on the semiconductor substrate between the first gate electrode and a second gate electrode. Therefore, the number of gates disposed in an active region is increased so that a total memory capacity of the semiconductor device, thereby reducing fabrication cost and improving productivity.
Claims11
A semiconductor device, comprising:
- a first gate electrode formed in a semiconductor substrate;
- a second gate electrode formed in a silicon growth layer provided over the semiconductor substrate, wherein the second gate electrode is formed to be arranged vertically above the first gate electrode;
- a bit line disposed between the semiconductor substrate and the silicon growth layer;
- and
- a first insulating layer formed over the first gate electrode and a second insulating layer formed over the second electrode.
2 more elements
A semiconductor device, comprising:
- a semiconductor substrate;
- an epitaxial layer;
- a bit line provided between the substrate and the epitaxial layer, the bit line being isolated from the substrate and coupled to the epitaxial layer;
- a storage node contact plug having a first portion and a second portion, the first portion extending into the epitaxial layer and the second portion extending into the semiconductor substrate;
- a first gate electrode formed in the substrate;
- a second gate electrode formed in the epitaxial layer;
- and
- a first insulating layer formed over the first gate electrode and a second insulating layer formed over the second electrode.
5 more elements
Dependencies are inferred from the claim text.