Nonvolatile semiconductor memory device and method for manufacturing same

A nonvolatile semiconductor memory device comprising:

• a substrate;
• a plurality of control gate electrodes and a plurality of intercellular dielectric films being stacked on the substrate alternately;
• a memory film being capable of storing charge and being provided on an inner surface of a through hole, the through hole extending in an arranging direction of the control gate electrodes and the intercellular dielectric films and penetrating through the control gate electrodes and the intercellular dielectric films;
• and
• a semiconductor member being provided inside the through hole,
• the memory film being provided on a surface of the semiconductor member,
• at least a portion of each of the intercellular dielectric films protruding toward the semiconductor member relative to the control gate electrodes in the inner surface of the through hole, and
• the memory film being corrugated along the inner surface of the through hole.