Shielded gate trench MOSFET with increased source-metal contact
AssigneeAlpha and Omega Semiconductor Incorporated
InventorJohn Chen
Life of this patent
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Abstract
A semiconductor device formed on a semiconductor substrate having a substrate top surface, includes: a gate trench extending from the substrate top surface into the semiconductor substrate; a gate electrode in the gate trench; a dielectric material disposed over the gate electrode; a body region adjacent to the gate trench; a source region embedded in the body region, at least a portion of the source region extending above the dielectric material; a contact trench that allows contact such as electrical contact between the source region and the body region; and a metal layer disposed over at least a portion of a gate trench opening, at least a portion of the source region, and at least a portion of the contact trench.
Claims12
A semiconductor device formed on a semiconductor substrate having a substrate top surface, comprising:
- a gate trench extending from the substrate top surface into the semiconductor substrate;
- a gate electrode in the gate trench;
- a gate top dielectric material disposed over the gate electrode;
- a body region adjacent to the gate trench;
- a source region embedded in the body region;
- a contact trench that allows contact between the source region and the body region;
- and
- a metal layer disposed over at least a portion of a gate trench opening, at least a portion of the source region, and at least a portion of the contact trench, wherein:
- the source region has a curved sidewall portion that is adjacent to the gate trench, and that extends above the gate top dielectric material.
Dependencies are inferred from the claim text.