Method of manufacture for a semiconductor device

A method of manufacturing a semiconductor device, the method comprising:

• providing a semiconductor layer of a first conductivity type;
• forming a semiconductor layer of a second conductivity type on the semiconductor layer of the first conductivity type;
• forming one or more insulator layers on the semiconductor layer of the second conductivity type;
• etching a plurality of trenches in the semiconductor layer of the second conductivity type, thereby forming a portion of a plurality of CC trenches and a CG trench;
• forming an oxide layer in the plurality of trenches and on the semiconductor layer of the second conductivity type;
• forming a masking layer on a portion of the one or more insulating layers;
• forming a gate oxide layer in the CG trench;
• forming polysilicon gate material in the CG trench;
• forming a second insulator layer, thereby filling a portion of the CC trenches;
• forming a second material, thereby filling a second portion of the CC trenches;
• forming a third insulator layer, thereby filling a remainder of the CC trenches;
• forming one or more device regions;
• forming a source metal layer;
• wherein the semiconductor layer of the second conductivity type comprises a multi-layer structure including an n-type material layer on the semiconductor layer of the first conductivity type and a p-type material layer on the n-type material layer;
• wherein the second material comprises aluminum fluoride;
• and
• wherein the second material further comprises an insulating layer.