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US 8,618,592 B2Granted
Dynamic random access memory (DRAM) cells and methods for fabricating the same
AssigneeAdvanced Micro Devices, Inc.
InventorsHyun-Jin Cho, Sang H. Dhong, Jung-Suk Goo, Gurupada Mandal
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Abstract
A semiconductor memory cell is provided that includes a trench capacitor and an access transistor. The access transistor comprises a source region, a drain region, a gate structure overlying the trench capacitor, and an active body region that couples the drain region to the source region. The active body region directly contacts the trench capacitor.
Claims16
A memory cell, comprising:
- a semiconductor-on-insulator (SOI) structure that comprises:
- a carrier wafer substrate;
- a semiconductor layer;
- and a buried oxide insulating layer disposed between the carrier substrate and the semiconductor layer;
- a trench capacitor formed in a trench in the SOI structure that extends into the carrier substrate;
- a source region and a drain region;
- and
- an active body region defined between the source region and the drain region, wherein the active body region directly contacts the trench capacitor.
5 more elements
A dynamic random access memory (DRAM) cell formed in and on a semiconductor-on-insulator (SOI) structure that comprises:
- a carrier substrate;
- a semiconductor layer;
- and a buried oxide insulating layer disposed between the carrier substrate and the semiconductor layer, the DRAM cell comprising:
- a storage capacitor that extends through the SOI structure into the carrier substrate;
- and
- an access transistor, comprising:
- a source region formed in the semiconductor layer;
- a drain region formed in the semiconductor layer;
- an active body region formed in the semiconductor layer between the source region and the drain region, wherein the active body region directly contacts the storage capacitor;
- and
- a gate structure overlying the storage capacitor.
8 more elements
A memory cell, comprising:
- a semiconductor structure that comprises a semiconductor layer;
- a trench capacitor formed in the semiconductor structure;
- a source region and a drain region in the semiconductor layer;
- and
- an active body region defined in the semiconductor layer between the source region and the drain region, wherein the active body region directly contacts the trench capacitor.
2 more elements
Dependencies are inferred from the claim text.