Spin transistor, integrated circuit, and magnetic memory
AssigneeKabushiki Kaisha Toshiba
InventorsTomoaki Inokuchi, Takao Marukame, Mizue Ishikawa, Hideyuki Sugiyama, Yoshiaki Saito
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Abstract
A spin transistor includes a first ferromagnetic layer, a second ferromagnetic layer, a semiconductor layer between the first and second ferromagnetic layers, and a gate electrode on or above a surface of the semiconductor layer, the surface being between the first and second ferromagnetic layers. The first ferromagnetic layer comprises a ferromagnet which has a first minority spin band located at a high energy side and a second minority spin band located at a low energy side, and has a Fermi level in an area of the high energy side higher than a middle of a gap between the first and second minority spin bands.
Claims11
A spin transistor comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- a semiconductor layer between the first and second ferromagnetic layers;
- and
- a gate electrode on or above a surface of the semiconductor layer, the surface being between the first and second ferromagnetic layers,
- wherein one of the first and second ferromagnetic layers has an invariable magnetization and the other has a variable magnetization,
- wherein data are stored by a relation of magnetization directions of the first and second ferromagnetic layers,
- wherein electrons flow from the first ferromagnetic layer to the second ferromagnetic layer in a read operation, and
- wherein the first ferromagnetic layer comprises a ferromagnet which has a first minority spin band located at a high energy side and a second minority spin band located at a low energy side, and has a Fermi level in an area of the high energy side higher than a middle of a gap between the first and second minority spin bands.
A spin transistor comprising:
- a first ferromagnetic layer;
- a second ferromagnetic layer;
- a semiconductor layer between the first and second ferromagnetic layers;
- and
- a gate electrode on or above a surface of the semiconductor layer, the surface being between the first and second ferromagnetic layers,
- wherein one of the first and second ferromagnetic layers has an invariable magnetization and the other has a variable magnetization,
- wherein data are stored by a relation of magnetization directions of the first and second ferromagnetic layers,
- wherein electrons flow from the first ferromagnetic layer to the second ferromagnetic layer in a read operation, and
- wherein the first ferromagnetic layer comprises a ferromagnet which has a first minority spin band located at a high energy side and a second minority spin band located at a low energy side, and has a Fermi level in an area of the high energy side higher than a middle of a gap between the first and second minority spin bands, and
- the second ferromagnetic layer comprises a ferromagnet which has a third minority spin band located at a high energy side and a fourth minority spin band located at a low energy side, and has a Fermi level in an area of the low energy side lower than a middle of a gap between the third and fourth minority spin bands.
Dependencies are inferred from the claim text.