Back to results
US 8,618,583 B2Granted
Junction gate field effect transistor structure having n-channel
AssigneeInternational Business Machines Corporation
InventorsPanglijen Candra, Richard A. Phelps, Robert M. Rassel, Yun Shi
Life of this patent
Estimating the term…
Abstract
The disclosure relates generally to junction gate field effect transistor (JFET) structures and methods of forming the same. The JFET structure includes a p-type substrate having a p-region therein; an n-channel thereunder; and n-doped enhancement regions within the n-channel, each n-doped enhancement region separated from the p-region.
Claims20
A junction gate field effect transistor (JFET) comprising:
- a p-type substrate having a p-region therein;
- an n-channel over the p-region;
- a p-well abutting each of the n-channel and the p-region;
- and
- n-doped enhancement regions within the n-channel, each n-doped enhancement region separated from the p-region,
- wherein the p-well abuts each of an n-well and a deep n-region, the deep n-region being disposed between the p-well and the p-type substrate,
- wherein the deep n-region abuts the n-well,
- wherein the n-channel is distinct from the n-well, and
- wherein the p-well is disposed between the n-well and the n-channel, and the p-well separates the n-well from the n-channel.
6 more elements
A junction gate field effect transistor (JFET) comprising:
- a p-type substrate having an n-well therein;
- a p-well abutting the n-well and abutting a deep n-region of the n-well, wherein the deep n-region is between the p-well and the substrate, and abuts the n-well;
- an n-channel abutting the p-well and on a p-region of the p-well, wherein the p-region is between the n-channel and the deep n-region, wherein the n-channel is distinct from the n-well and the p-well is disposed between the n-well and the n-channel;
- a p-doped gate on the n-channel;
- n-doped enhancement regions within the n-channel, each n-doped enhancement region separated from the p-doped gate by a shallow trench isolation;
- an n-well contact on the n-well;
- a p-well contact on the p-well and in contact with the p-doped gate;
- and
- n-channel contacts on the n-doped enhancement regions, wherein the n-channel contacts are each separated from the p-doped gate and separated from the p-well contact by a shallow trench isolation.
6 more elements
A junction gate field effect transistor (JFET) comprising:
- a p-type substrate having a p-region therein;
- an n-channel over the p-region;
- a p-doped gate on the n-channel;
- and
- n-doped enhancement regions within the n-channel, each n-doped enhancement region separated from the p-region, wherein the n-doped enhancement regions are each separated from the p-doped gate by a shallow trench isolation;
- a p-well abutting the p-region and the n-channel;
- a deep n-region directly below and in contact with the p-region, the deep n-region abutting the n-well and the p-well;
- and
- an n-well abutting the p-well, the n-well and the n-channel being separated from one another by the p-well.
6 more elements
Dependencies are inferred from the claim text.