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US 8,618,577 B2Granted
Compound semiconductor device and manufacturing method thereof
AssigneeFujitsu Limited
InventorTadahiro Imada
Life of this patent
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Abstract
An n-type GaN layer (3), a GaN layer (7) formed over the n-type GaN layer (3), an n-type AlGaN layer (9) formed over the GaN layer (7), a gate electrode (15) and a source electrode (13) formed over the n-type AlGaN layer (9), a drain electrode (14) formed below the n-type GaN layer (3), and a p-type GaN layer (4) formed between the GaN layer (7) and the drain electrode (14) are provided.
Claims16
A compound semiconductor device, comprising:
- a first compound semiconductor layer of a first conductivity type;
- an electron transit layer formed over the first compound semiconductor layer;
- an electron supply layer formed over the electron transit layer;
- a gate electrode and a source electrode formed over the electron supply layer;
- a drain electrode formed below the first compound semiconductor layer;
- a second compound semiconductor layer of a second conductivity type different from the first conductivity type, formed between the electron transit layer and the drain electrode;
- a control unit controlling an electric potential of the second compound semiconductor layer;
- and
- a current confinement layer comprising an opening and formed between the electron transit layer and the drain electrode, the current confinement layer being in contact with the second compound semiconductor layer,
- wherein the second compound semiconductor layer overlaps the opening.
7 more elements
A manufacturing method of a compound semiconductor device, comprising:
- forming, over a first compound semiconductor layer of a first conductivity type, a second compound semiconductor layer of a second conductivity type different from the first conductivity type;
- forming an electron transit layer over the second compound semiconductor layer;
- forming an electron supply layer over the electron transit layer;
- forming a gate electrode and a source electrode over the electron supply layer;
- forming a drain electrode below the first compound semiconductor layer;
- forming a control unit controlling an electric potential of the second compound semiconductor layer;
- forming, before said forming the electron transit layer, a current confinement layer comprising an opening over the first compound semiconductor layer, the current confinement layer being in contact with the second compound semiconductor layer,
- wherein the second compound semiconductor layer overlaps the opening.
5 more elements
Dependencies are inferred from the claim text.