Light emitting and lasing semiconductor methods and devices

A method for producing light emission from a semiconductor structure, comprising the steps of:

• providing a transistor that includes a semiconductor base region of a first conductivity type and having a relatively long minority carrier diffusion length characteristic, between a semiconductor emitter region of a second conductivity type, opposite to that of said first conductivity type, and a semiconductor collector region of said second conductivity type;
• providing, between said base region and said collector region, a semiconductor auxiliary region of said first conductivity type and having a relatively short minority carrier diffusion length characteristic;
• providing, within said base region, a region exhibiting quantum size effects;
• providing an emitter electrode coupled with said emitter region, a base electrode coupled with said base region, and a collector electrode coupled with said collector region;
• and
• applying signals with respect to said emitter, base, and collector electrodes to obtain light emission from said semiconductor structure.