Semiconductor light emitting device having a reflective layer

A semiconductor light emitting device having a reflective layer comprising:

• a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
• an electrode on a first region of a top surface of the first conductive semiconductor layer;
• a conductive support member formed of a metal under the light emitting structure;
• a metal layer between the light emitting structure and the conductive support member;
• wherein a bottom part of the metal layer is formed in the conductive support member;
• wherein the metal layer has a protrusion on the conductive support member, and
• the reflective layer between the metal layer and the light emitting structure,
• wherein the light emitting structure includes a nitride-based material,
• wherein the metal layer is physically contacted with a lower surface of the reflective layer,
• wherein the reflective layer includes a first layer and a second layer,
• wherein the first layer has a different refractive index from the second layer, and
• wherein the conductive support member has a width wider than that of the reflective layer and has a thickness thicker than that of the metal layer.