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US 8,618,566 B2Granted
Light emitting device and method of manufacturing the same
AssigneeLG Innotek Co., Ltd.
InventorsYong Tae Moon, Jeong Soon Yim, Jeong Sik Lee
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Abstract
Provided is a light emitting device. In one embodiment, a light emitting device includes: a substrate including β-Ga203; a light emitting structure on the substrate, the light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; an electrode on the light emitting structure; and a porous layer at a lateral surface region of the substrate.
Claims8
A light emitting device comprising:
- a substrate including β-Ga203;
- a light emitting structure on the substrate, the light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer;
- an electrode on the light emitting structure;
- a porous layer at a lateral surface region of the substrate;
- and
- a passivation layer in at least the lateral surface region of the light emitting structure,
- wherein the porous layer is made of β-Ga203 and a crystalline structure of the porous layer is less dense than that of the β-Ga203 in the substrate,
- wherein a top surface of the porous layer is physically connected to a bottom surface of the passivation layer.
5 more elements
Dependencies are inferred from the claim text.