High efficiency light emitting diodes
AssigneeTSMC Solid State Lighting Ltd.
InventorsJung-Tang Chu, Hsing-Kuo Hsia, Ching-Hua Chiu
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Abstract
The present disclosure relates to high efficiency light emitting diode devices and methods for fabricating the same. In accordance with one or more embodiments, a light emitting diode device includes a substrate having one or more recessed features formed on a surface thereof and one or more omni-directional reflectors formed to overlie the one or more recessed features. A light emitting diode layer is formed on the surface of the substrate to overlie the omni-directional reflector. The one or more omni-directional reflectors are adapted to efficiently reflect light.
Claims20
A light emitting diode device comprising:
- a substrate having a surface;
- an interlayer formed on the surface of the substrate, the interlayer comprising a non-gallium-nitride (GaN) material including at least one of silicon (Si) or silicon-carbide (SiC);
- a recessed feature disposed in the interlayer;
- an omni-directional reflector disposed at least partially within the recessed feature, the omni-directional reflector adapted to efficiently reflect light;
- and
- a light emitting diode layer disposed over the surface of the substrate, including over the omni-directional reflector.
A light emitting diode device comprising:
- a substrate having a surface;
- an interlayer formed on the surface of the substrate, the interlayer comprising a non-gallium-nitride (GaN) material including at least one of silicon (Si) or silicon-carbide (SiC);
- a plurality of recessed features formed in the interlayer;
- a plurality of omni-directional reflectors disposed on sidewalls and bottom surfaces of corresponding recessed features, the omni-directional reflectors adapted to efficiently reflect light;
- and
- a light emitting diode layer disposed over the surface of the substrate, including over the omni-directional reflectors,
- wherein each recessed feature includes a bottom portion and sidewall portions that extend at an inclined angle from the bottom portion to the surface of the substrate, the bottom portion being disposed at a depth in the substrate, and
- wherein each omni-directional reflector is disposed on the sidewall portions and the bottom portion of corresponding recessed features.
A method of fabricating a light emitting diode comprising:
- providing a substrate having a surface;
- an interlayer formed on the surface of the substrate, the interlayer comprising a non-gallium-nitride (GaN) material including at least one of silicon (Si) or silicon-carbide (SiC);
- forming a recessed feature within the interlayer, the recessed feature being defined by a bottom portion and sidewall portions that extend at an inclined angle from the bottom portion to the surface of the substrate, and the bottom portion being disposed at a depth in the substrate;
- forming a omni-directional reflector over the recessed feature, the omni-directional reflector adapted to efficiently reflect light;
- and
- forming a light emitting diode layer on the surface of the substrate and over the omni-directional reflectors.
Dependencies are inferred from the claim text.